Sonderforschungsbereich 595

Division C – Modelling

C1 Quantum mechanical computer simulations for electron and defect structure of oxides
C2 Atomistic computer simulations of defects and their mobility in metal oxides
C3 Microscopic investigations into defect agglomeration and its effect on the mobility of domain walls
C5 Phenomenological modelling of bipolar carrier transport in organic semiconducting devices under special consideration of injection, transport and recombination phenomenae
C6 Micromechanical Simulation on Interaction of Point Defects with Domain Structure in Ferroelectrics